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this is information on a product in full production. may 2013 docid024653 rev 1 1/22 22 STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd n-channel 600 v - 0.25 typ., 13 a fdmesh? ii power mosfet (with fast diode) in d 2 pak, to-220fp, to-220 and to-247 packages datasheet ? production data figure 1. internal schematic diagram features ? the worldwide best r ds(on) * area amongst the fast recovery diode devices ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance ? extremely high dv/dt and avalanche capabilities applications ? switching applications description these fdmesh? ii power mosfets with intrinsic fast-recovery body diode are produced using the second generation of mdmesh? technology. utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. they are ideal for bridge topologies and zvs phase-shift converters. $0y '7$% * 6 to-220 to-220fp to-247 d 2 pak 1 3 tab 1 2 3 1 2 3 tab 1 2 3 order codes v dss @ t jmax r ds(on) max i d STB18NM60ND 650 v <0.29 13 a stf18nm60nd stp18nm60nd stw18nm60nd table 1. device summary order codes marking package packaging STB18NM60ND 18nm60nd d 2 pak tape and reel stf18nm60nd to-220fp tube stp18nm60nd to-220 stw18nm60nd to-247 www.st.com
contents STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd 2/22 docid024653 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
docid024653 rev 1 3/22 STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d 2 pak, to- 220, to-247 to-220fp v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 13 13 (1) 1. limited by maximum junction temperature a i d drain current (continuous) at t c = 100 c 8.19 8.19 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 52 52 (1) a p tot total dissipation at t c = 25 c 130 30 w dv/dt (3) 3. i sd 13 a, di/dt 400 a/s, v dd = 80% v (br)dss, v ds(peak) v (br)dss peak diode recovery voltage slope 40 v/ns dv/dt (4) 4. v ds 480 v mosfet dv/dt ruggedness 40 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) -- 2500 v t stg storage temperature -55 to 150 c t j operating junction temperature 150 c table 3. thermal data symbol parameter d2pak to-220fp to-220 to-247 unit r thj-case thermal resistance junction-case max 0.96 4.17 0.96 0.96 c/w r thj-amb thermal resistance junction-amb max 62.5 50 c/w r thj-pcb thermal resistance junction-pcb max 30 c/w table 4. avalanche characteristics symbol parameter max value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by t j max ) 3.5 a e as single pulse avalanche energy (starting tj = 25 c, i d = i as , v dd = 50 v) 187 mj
electrical characteristics STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd 4/22 docid024653 rev 1 2 electrical characteristics (t case =25c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v, v ds = 600 v, t c =125 c 1 100 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 345v r ds(on) static drain-source on resistance v gs = 10 v, i d = 6.5 a 0.25 0.29 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f =1 mhz, v gs = 0 - 1030 - pf c oss output capacitance - 30 - pf c rss reverse transfer capacitance -3.2-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0v to 480 v -148- pf rg gate input resistance f=1 mhz gate dc bias=0 test signal level=20 mv open drain -3.6- q g total gate charge v dd = 480 v, i d = 13 a v gs = 10 v (see figure 18) -34-nc q gs gate-source charge - 5.5 - nc q gd gate-drain charge - 20 - nc
docid024653 rev 1 5/22 STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd electrical characteristics table 7. switching times symbol parameter test conditions min typ max unit t d(on) turn-on delay time v dd = 300 v, i d = 6.5 a, r g = 4.7 , v gs = 10 v (see figure 17) -55-ns t r rise time - 15.5 - ns t d(off) turn-off delay time - 13 - ns t f fall time - 18 - ns table 8. source drain diode symbol parameter test conditions min typ max unit i sd source-drain current - 13 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 52 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 13 a, v gs =0 - 1.6 v t rr reverse recovery time i sd =13 a, di/dt =100 a/s, v dd = 100 v (see figure 19) -136 ns q rr reverse recovery charge - 843 nc i rrm reverse recovery current - 12.5 a t rr reverse recovery time v dd = 100 v di/dt =100 a/s, i sd = 13 a t j = 150 c (see figure 19) -198 ns q rr reverse recovery charge - 1425 nc i rrm reverse recovery current - 14.5 a
electrical characteristics STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd 6/22 docid024653 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak and to-220 figure 3. thermal impedance for d 2 pak and to-220 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15785v1 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp i d 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 10 am15786v1 figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15787v1
docid024653 rev 1 7/22 STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd electrical characteristics figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. normalized gate threshold voltage vs. temperature i d 6 4 2 0 0 10 v ds (v) (a) 5 15 8 4v 5v 6v v gs =7, 8, 9, 10v 20 10 12 14 16 18 20 22 24 26 28 am15788v1 i d 4 0 0 4 v gs (v) 8 (a) 2 6 8 12 v ds =18v 14 16 10 2 6 10 18 20 22 24 26 28 30 am15789v1 v gs 6 4 2 0 0 q g (nc) (v) 8 8 10 v dd =480v 300 200 100 0 400 v ds 16 500 v ds (v) i d =13a 24 32 am15791v1 r ds(on) 0.255 0.250 0.245 0.240 0 4 i d (a) ( ) 2 6 0.260 8 10 v gs =10v 0.265 12 am15790v1 c 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 am15792v1 v gs(th) 0.85 0.80 0.75 0.70 t j (c) (norm) -50 0.90 -25 50 100 0.95 0 25 75 125 1.00 1.05 1.10 id=250 a am15793v1
electrical characteristics STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd 8/22 docid024653 rev 1 figure 14. normalized on-resistance vs temperature figure 15. source-drain diode forward characteristics r ds(on) 1.3 1.1 0.9 0.7 t j (c) (norm) 0.5 -50 -25 0 25 i d =13 a 50 75 100 125 1.5 1.7 1.9 2.1 am15794v1 v sd 0 4 i sd (a) (v) 2 10 6 8 0.4 0.6 0.8 1 t j =-50c t j =150c t j =25c 1.2 12 am15795v1 figure 16. normalized v ds vs temperature v ds 0.98 0.96 0.94 0.92 t j (c) (norm) -50 1 i d =1ma -25 50 100 1.02 0 25 75 125 1.04 1.06 1.08 am15796v1
docid024653 rev 1 9/22 STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd test circuit 3 test circuit figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform
package mechanical data STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd 10/22 docid024653 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024653 rev 1 11/22 STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd package mechanical data table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd 12/22 docid024653 rev 1 figure 23. d2pak (to-263) drawing figure 24. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid024653 rev 1 13/22 STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd package mechanical data table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd 14/22 docid024653 rev 1 figure 25. to-220fp drawing 7012510_rev_k_b
docid024653 rev 1 15/22 STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd package mechanical data table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd 16/22 docid024653 rev 1 figure 26. to-220 type a drawing 0015988_typea_rev_s
docid024653 rev 1 17/22 STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd package mechanical data table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd 18/22 docid024653 rev 1 figure 27. to-247 drawing 0075325_g
docid024653 rev 1 19/22 STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd packaging mechanical data 5 packaging mechanical data table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
packaging mechanical data STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd 20/22 docid024653 rev 1 figure 28. tape figure 29. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
docid024653 rev 1 21/22 STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd revision history 6 revision history table 14. document revision history date revision changes 15-may-2013 1 first release
STB18NM60ND, stf18nm60nd, stp18nm60nd, stw18nm60nd 22/22 docid024653 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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